PART |
Description |
Maker |
EDI8L24129V EDI8L24129V10BI EDI8L24129V15BC EDI8L2 |
128Kx24 SRAM 3.3 Volt
|
WEDC[White Electronic Designs Corporation]
|
EDI8L24128C12BC EDI8L24128C15BC EDI8L24128C12BI ED |
128Kx24 Asynchronous SRAM, 5V
|
WEDC[White Electronic Designs Corporation]
|
EDI8F24128C |
128Kx24 Static RAM CMOS, High Speed Module(128Kx24高速CMOS静态RAM模块)
|
White Electronic Designs Corporation
|
AS7C33256FT32_36A AS7C33256FT32_36A.V1.1 AS7C33256 |
3.3V 256K x 32/36 Flow-through synchronous SRAM 256K X 32 STANDARD SRAM, 8.5 ns, PQFP100 3.3V 256K x 32/36 Flow-through synchronous SRAM 256K X 36 STANDARD SRAM, 7.5 ns, PQFP100 3.3V 256K x 32/36 Flow-through synchronous SRAM 256K X 32 STANDARD SRAM, 7.5 ns, PQFP100 3.3V 256K x 32/36 Flow-through synchronous SRAM 256K X 32 STANDARD SRAM, 10 ns, PQFP100 DIODE ZENER SINGLE 1000mW 24Vz 10.5mA-Izt 0.05 5uA-Ir 18.2Vr DO41-GLASS 5K/AMMO From old datasheet system Sync SRAM - 3.3V
|
Alliance Semiconductor, Corp. Alliance Semiconductor Corporation ALSC
|
P4C1024-17PC P4C214-17PPC P4C1024-17JC P4C1024-17J |
128K X 8 STANDARD SRAM, 17 ns, PDIP32 PLASTIC, DIP-32 16K X 16 CACHE SRAM, 17 ns, PQCC52 PLASTIC, LCC-52 128K X 8 STANDARD SRAM, 17 ns, PDSO32 SOJ-32 64K X 1 STANDARD SRAM, 10 ns, PDIP22 1K X 4 STANDARD SRAM, 10 ns, PDIP18 128K X 8 STANDARD SRAM, 15 ns, PDSO32
|
Performance Semiconductor, Corp. Pyramid Semiconductor, Corp. PERFORMANCE SEMICONDUCTOR CORP PYRAMID SEMICONDUCTOR CORP
|
R1RW0408DGE-2PR R1RW0408D R1RW0408DGE-2LR |
4M High Speed SRAM (512-kword x 8-bit) Memory>Fast SRAM>Asynchronous SRAM
|
Renesas Electronics Corporation. RENESAS[Renesas Electronics Corporation]
|
HM66AQB18204BP-33 HM66AQB36104BP-40 HM66AQB9404BP- |
Memory>Fast SRAM>QDR SRAM 36-Mbit QDRTMII SRAM 4-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
HM66AQB18202BP-40 HM66AQB18202BP-50 HM66AQB18202BP |
Memory>Fast SRAM>QDR SRAM 36-Mbit QDRTMII SRAM 2-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
HM62W8511HCLJP-12 HM62W8511HC HM62W8511HCJP-10 HM6 |
Memory>Fast SRAM>Asynchronous SRAM 4M High Speed SRAM (512-kword x 8-bit) BOX 5.0X1.85X1.0 W/CLP BLK
|
RENESAS[Renesas Electronics Corporation] Renesas Electronics Corporation.
|
AS7C251MFT18A AS7C251MFT18A-75TQC AS7C251MFT18A-75 |
2.5V 1M x 18 flowthrough burst synchronous SRAM 1M X 18 STANDARD SRAM, 7.5 ns, PQFP100 2.5V 1M x 18 flowthrough burst synchronous SRAM 1M X 18 STANDARD SRAM, 10 ns, PQFP100 High Speed CMOS Logic Triple 3-Input AND Gates 14-SOIC -55 to 125 Sync SRAM - 2.5V
|
Alliance Semiconductor, Corp. Everlight Electronics Co., Ltd. ALSC Alliance Semiconductor Corporation
|
CY7C1168V18-400BZXC CY7C1168V18-375BZXC CY7C1168V1 |
1M X 18 DDR SRAM, 0.45 ns, PBGA165 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 18-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) 1M X 18 DDR SRAM, 0.45 ns, PBGA165 2M X 8 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp. CYPRESS SEMICONDUCTOR CORP
|
WS512K32-70 WS512K32-85 WS512K32-100 WS512K32F-85H |
85ns; 5V power supply; 512K x 32 SRAM module, SMD 5962-94611 512Kx32 SRAM Module(512Kx32???RAM妯″?锛???????0ns锛? 512Kx32 SRAM Module(512Kx32???RAM妯″?锛???????00ns锛? 512Kx32 SRAM Module(512Kx32静态RAM模块(存取时5ns 512Kx32 SRAM Module(512Kx32静态RAM模块(存取时0ns
|
White Electronic Designs Corporation
|